New Bismuth Transistor Runs 40% Faster and Uses 10% Less Power
1 min read
Summary
Chinese scientists have created the world’s fastest transistor at Peking University, surpassing previous silicon-based designs.
The new transistor is a GAAFET (Gate-All-Around Field-Effect Transistor) and is constructed from bismuth oxyselenide for the channel, and bismuth selenite oxide as the gate material.
Transistors are the key component in transistors and previous designs have struggled to keep up with the demands of modern technology, with a limit on how small they can currently be created.
This new transistor uses new materials and a new design to achieve both faster switching and lower power consumption at denser sizes.
It is speculated that the new transistor could be used in the development of quantum computers.
This is the latest in a series of scientific advances in China that have drawn attention away from counterparts in Western nations.
It is not clear when, or if, the new transistor will be available commercially.
